Back Cover: Quantum Sensing of Insulator‐to‐Metal Transitions in a Mott Insulator (Adv. Quantum Technol. 5/2021). Issue 5 (14th May 2021)

• Record Type: Journal Article
• Authors: McLaughlin, Nathan J.; Kalcheim, Yoav; Suceava, Albert; Wang, Hailong L.; Schuller, Ivan K.; Du, Chunhui Rita
• Is Part Of: Advanced quantum technologies. Volume 4:Issue 5(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-05-14
• Subjects: Quantum theory -- Periodicals; Quantum computing -- Periodicals; Quantum chemistry -- Periodicals; Quantum electronics -- Periodicals; 537.5
• DOI: 10.1002/qute.202170053
• Languages: English
• ISSNs: 2511-9044

Abstract

Abstract : The back cover of this issue, referring to article number 2000142 by Chunhui Rita Du and co‐workers, represents the authors' work on measuring insulator‐to‐metal transition in a Mott insulator using nitrogen‐vacancy (NV) centers in diamond. An optically active NV center works as a nanoscale quantum sensor to locally probe the temperature and magnetic field environment of the current filaments between gold contacts on a film of vanadium dioxide, revealing the fundamental mechanism of insulator‐to‐metal transition. This research highlights the opportunities offered by NV centers in exploring nanoscale thermal and electrical behaviors in Mott materials which might have applications in developing cutting‐edge neuromorphic computing platforms. [Cover design: Gerald Yan]