A Unified Channel Charges Expression for Analytic MOSFET Modeling. (25th December 2012)

• Record Type: Journal Article
• Authors: Murray, Hugues; Martin, Patrick
• Other Names: Ghibaudo Gerard Academic Editor.
• Is Part Of: Active and passive electronic components. Volume 2012(2012)
• Publication Date: 2012-12-25
• Subjects: Electronics -- Periodicals; Passive components -- Periodicals; Electronic apparatus and appliances -- Periodicals; 621.381505
• DOI: 10.1155/2012/652478
• Languages: English
• ISSNs: 0882-7516

Abstract

Abstract : Based on a 1D Poissons equation resolution, we present an analytic model of inversion charges allowing calculation of the drain current and transconductance in the Metal Oxide Semiconductor Field Effect Transistor. The drain current and transconductance are described by analytical functions including mobility corrections and short channel effects (CLM, DIBL). The comparison with the Pao-Sah integral shows excellent accuracy of the model in all inversion modes from strong to weak inversion in submicronics MOSFET. All calculations are encoded with a simple C program and give instantaneous results that provide an efficient tool for microelectronics users.