Cite
HARVARD Citation
Yeh, Y. et al. (2021). Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors. Journal of physics. p. . [Online].
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Yeh, Y. et al. (2021). Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors. Journal of physics. p. . [Online].