Fast growth of centimeter-scale single-crystal copper foils with high-index planes by the edge-incision effect. (26th April 2021)

• Record Type: Journal Article
• Authors: Li, Li; Ma, Teng; Yu, Wei; Zhu, Menglong; Li, Jing; Chen, Zhi; Li, Haohan; Zhao, Meng; Teng, Jinghua; Tian, Bingbing; Su, Chenliang; Loh, Kian Ping
• Is Part Of: 2D materials. Volume 8:Number 3(2021)
• Publication Date: 2021-04-26
• Subjects: single-crystal copper foils -- high-index planes -- abnormal grain growth -- incisions -- high-temperature annealing; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/abf54c
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: Single-crystal copper substrates have gained importance for the preparation of high-quality graphene and hexagonal boron nitride monolayer films by chemical vapor deposition (CVD). Especially, large-scale single-crystal copper foils with high-index planes are synthesized recently and attract great interests. However, the current synthesis methods of single-crystal copper foils and films are energy and time-consuming. Here, we show a rapid and efficient approach for the preparation of centimeter-scale single-crystal copper foils by making small incisions at the edges of polycrystalline copper foils before high-temperature annealing. 1.5 cm × 4 cm pieces of grain-boundary-free copper foils can be prepared by annealing at 1080 °C for 60 min. The annealed copper foil manifests a single high-index plane and is grain-boundary-free over the whole area. We also show that CVD of graphene on the high-index single-crystal copper affords a higher growth rate than on low-index copper substrates.