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Chen, G. et al. (n.d.). Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors *Project supported by the Key R&D Program of Jiangsu Province (No. BE2016085), the National Natural Science Foundation of China (Nos. 61674051), and the External Cooperation Program of BIC, Chinese Academy of Sciences (No. 121E32KYSB20160071).. Journal of semiconductors. p. . [Online].