Impact of pre-annealing time on the growth and properties of Ag2ZnSnSe4 thin films. (July 2021)

• Record Type: Journal Article
• Authors: Patil, Rhishikesh Mahadev; Chandra, G. Hema; Subbaiah, Y.P. Venkata; Gupta, Mukul; Rao, R. Prasada
• Is Part Of: Journal of physics and chemistry of solids. Volume 154(2021)
• Publication Date: 2021-07
• Subjects: Ag2ZnSnSe4 thin films -- Pre-annealing treatment -- Rietveld refinement -- XPS analysis -- Morphological study -- Antisite defect complex; Solids -- Periodicals; Solides -- Périodiques; Solids; Periodicals; 530.41
• DOI: 10.1016/j.jpcs.2021.110067
• Languages: English
• ISSNs: 0022-3697

Abstract

Abstract: In this study, we demonstrate the pre-annealing treatment of stacked precursors at 250 °C for different durations (5, 10, 15, 20, 30, and 60 min), subsequently selenized at 400 °C for 1 min and correlate its effects on structural, morphological, and optoelectronic properties of Ag2 ZnSnSe4 films (AZTSe) with a detailed characterization. After investigating pre-annealing treatment duration, the grown AZTSe films show various binary/ternary phases and appreciable transformation in surface morphology. However, stacked layers pre-annealed for 20 min and selenized at 400 °C for 1 min show a single-phase kesterite AZTSe with two main Raman peaks at 181 and 198 cm −1 with compact and larger grains (~0.53 μm). The bond length and bond angles for single-phase AZTSe films are evaluated using Rietveld refinement of X-ray diffraction data. The core-level X-ray photoelectron spectra confirm the oxidation formula as Ag2 +1 Zn +2 Sn +4 Se4 −2 and uniform distribution of elements is established by secondary ion mass spectrometer measurements, for precursor films pre-annealed at 250 °C for 20 min and selenized at 400 °C for 1 min. They possess n -type conductivity with a maximum mobility of 79.4 cm 2 (Vs) −1 and a direct band gap of 1.37 eV. Highlights: AZTSe thin films were prepared using the pre-annealing cum selenization of evaporated precursors utilizing RTP. XRD and Raman analysis confirmed the existence of single phase AZTSe. An in-depth compositional analysis was carried out using XPS, EDX and SIMS. The micro-structure and opto-electronic properties are correlated systematically by altering the process parameters.