P‐Type Dopants As Dual Function Interfacial Layer for Efficient and Stable Tin Perovskite Solar Cells. Issue 5 (11th March 2021)

• Record Type: Journal Article
• Authors: Chen, Yuhui; Cao, Kun; Cheng, Yangfeng; Shen, Haoran; Du, Chao; Wang, Qichen; Chen, Cheng; Cui, Hao; Lan, Tao; Liu, Lihui; Shen, Wei; Chen, Shufen
• Is Part Of: Solar RRL. Volume 5:Issue 5(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-03-11
• Subjects: p‐type dopants -- interfacial layer -- lead free -- perovskite solar cells -- tin based solar cells; Solar energy -- Periodicals; Photovoltaic power generation -- Periodicals; Solar energy -- Research -- Periodicals; Photovoltaic power generation -- Research -- Periodicals; Periodicals; 333.7923
• DOI: 10.1002/solr.202100068
• Languages: English
• ISSNs: 2367-198X

Abstract

Abstract : Interfacial engineering plays a key role for the stability and efficiency of perovskite photovoltaics, especially for the tin perovskite solar cells (TPSCs). Herein, a simple and effective interfacial layer approach to modify the heterointerface between hole transport layer (HTL) and perovskite active layer is reported. By the deposition of a p‐type dopant, tetrafluoro‐tetracyanoquinodimethane (F4TCNQ) onto the commonly used poly(3, 4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS) HTL, a favorable energy level alignment with the mixed‐cation tin perovskite is obtained. Moreover, the F4TCNQ interfacial layer introduces a passivated contact and suppressed trap density at the HTL/perovskite interface through halogen bonding. As a result, the optimized TPSC yields an improved efficiency of 8.11% as compared with 6.41% of the reference device. Meanwhile, the stability of the TPSC is also improved due to the hydrophobicity of the F4TCNQ interfacial layer. This work demonstrates that the incorporation of an interfacial layer at the HTL/perovskite interface is a feasible approach to boost the efficiency and stability of inverted TPSC. Abstract : A dual function interfacial layer is proposed with p‐type dopant, tetrafluoro‐tetracyanoquinodimethane (F4TCNQ), which induces a favorable energy level alignment and passivated contacts between the hole transport layer and perovskite layer. The optimized device achieves an improved power conversion efficiency of 8.11% compared with the pristine solar cell.