SiGe based line tunneling field-effect transistors Experimental properties and characteristics. (2018)

Record Type:: Journal Article
Title:: SiGe based line tunneling field-effect transistors Experimental properties and characteristics. (2018)
Main Title:: SiGe based line tunneling field-effect transistors Experimental properties and characteristics
Authors:: Glass, Stefan
Driesch, Nils von den
Narimani, Keyvan
Buca, Dan
Mussler, Gregor
Mantl, Siegfried
Zhao, Qing-Tai
Is Part Of:: Composants nanoélectroniques =. Volume 1(2018)
Journal:: Composants nanoélectroniques =
Issue:: Volume 1(2018)
Issue Display:: Volume 1, Issue 2018 (2018)
Year:: 2018
Volume:: 1
Issue:: 2018
Issue Sort Value:: 2018-0001-2018-0000
Page Start:
Page End:
Publication Date:: 2018
Subjects:: Nanoelectronics -- Periodicals
621.381
Journal URLs:: http://openscience.fr/Composants-nanoelectroniques ↗
Languages:: English
ISSNs:: 2516-3914
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library HMNTS - ELD Digital store
Ingest File:: 16742.xml