Performance analysis of gate engineered dielectrically modulated TFET biosensors. Issue 4 (3rd April 2021)

• Record Type: Journal Article
• Authors: Agnihotri, Suneet Kumar; Samajdar, Dip Prakash; Rajan, Chithraja; Yadav, Ankam Srujan; Gnanesh, Gowri
• Is Part Of: International journal of electronics. Volume 108:Issue 4(2021)
• Page Start: 607
• Page End: 622
• Publication Date: 2021-04-03
• Subjects: Dielectrically modulated biosensor -- TFET -- nanogap cavity -- sensitivity; Electronics -- Periodicals; Electronic control -- Periodicals; 621.381
• DOI: 10.1080/00207217.2020.1793407
• Languages: English
• ISSNs: 0020-7217

Abstract

ABSTRACT: This paper presents, a short gate dual metal source electrode dielectrically modulated tunnel field-effect transistor (SDM SE DM-TFET) has been compared with conventional dual gate-source electrode dielectrically modulated tunnel field-effect transistor (DG SE DM-TFET) for the biosensing application. Hence, gate work function engineering is applied in our proposed device in which gate metal is split into two different work function segments as ϕ G 1 = 4.53 e V and ϕ G 2 = 3.8 e V . Additionally, a potential of −1.2 V is applied to the source electrode having a work function of ϕ S E = 4.53 e V . ϕ G 2 is the gate electrode work function at the source side and ϕ G 1 is the gate electrode work function at the drain side. The investigation is performed by varying the dielectric constant and charge density for choosing an optimised value for ϕ G 2 . The performance comparison has been done in terms of I O N current, sensitivity and sensing speed. It can be verified from the simulated results that our proposed device exhibits superior performance as compared to the existing structures.