Tuning the magnetotransport behavior of topological insulator with a transition-metal oxide layer. (12th July 2019)

• Record Type: Journal Article
• Authors: Liao, Liyang; Chen, Peng; Kou, Xufeng; Pan, Feng; Song, Cheng
• Is Part Of: Journal of physics. Volume 31:Number 40(2019)
• Publication Date: 2019-07-12
• Subjects: topological insulator -- weak-antilocalization -- magnetotransport -- transition-metal oxide; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/ab2f53
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: The interaction between topological insulator (TI) and its adjacent magnetic layer serves as a basis for exploring the device application of TI. Here we investigate the modulation of the magnetotransport behavior of Bi2 Te3 TI with a transition-metal oxide layer NiO. It is found that the weak-antilocalization effect is absent at low magnetic fields and the magnetoresistance ratio decreases monotonically with increasing the NiO growth temperature from 300 to 473 K, indicating the suppression of the topological surface states of Bi2 Te3 . Such behaviors are attributed to the decomposition of NiO and the concomitant formation of magnetic impurities at the Bi2 Te3 /NiO interface. Differently, the weak-antilocalization shows no significant weakening with the growth of Cr2 O3 top layer, due to its better chemical stability. Our observation would be significant for the material selection for the device integration of TI.