Cite
HARVARD Citation
Lin, L. et al. (2021). Electronic structures and ferromagnetism of 3C-SiC doped with (Fe, Co) double-impurities by first-principles calculations. Materials science in semiconductor processing. p. . [Online].
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Lin, L. et al. (2021). Electronic structures and ferromagnetism of 3C-SiC doped with (Fe, Co) double-impurities by first-principles calculations. Materials science in semiconductor processing. p. . [Online].