CW operation of high‐power blue laser diodes with polished facets on semi‐polar (202¯1¯) GaN substrates. Issue 24 (11th November 2016)

• Record Type: Journal Article
• Authors: Pourhashemi, A.; Farrell, R.M.; Cohen, D.A.; Becerra, D.L.; DenBaars, S.P.; Nakamura, S.
• Is Part Of: Electronics letters. Volume 52:Issue 24(2016)
• Page Start: 2003
• Page End: 2005
• Publication Date: 2016-11-11
• Subjects: gallium compounds -- III‐V semiconductors -- semiconductor lasers -- ridge waveguides -- optical fabrication -- waveguide lasers -- laser beams -- polishing; CW operation -- high‐power blue laser diodes -- polished facets -- semipolar substrates -- continuous wave operation -- ridge waveguide LD -- cladding layers -- two‐facet CW output power -- optical power density -- power 1.71 W -- wavelength 452 nm -- current 3 A -- GaN; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2016.3055
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Continuous wave (CW) operation of high‐power blue laser diodes (LDs) with polished facets on semi‐polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two‐facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm 2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high‐power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high‐power CW semi‐polar LDs.