Electrically pumped continuous‐wave 1.3‐µm InAs/GaAs quantum dot lasers monolithically grown on Si substrates. Issue 2 (1st April 2014)

• Record Type: Journal Article
• Authors: Wu, Jiang; Lee, Andrew; Jiang, Qi; Tang, Mingchu; Seeds, Alwyn J.; Liu, Huiyun
• Is Part Of: IET optoelectronics. Volume 8:Issue 2(2014)
• Page Start: 20
• Page End: 24
• Publication Date: 2014-04-01
• Subjects: current density -- gallium arsenide -- III‐V semiconductors -- indium compounds -- integrated optics -- laser beams -- molecular beam epitaxial growth -- monolithic integrated circuits -- optical pumping -- silicon -- quantum dash lasers; electrically pumped continuous‐wave InAs/GaAs quantum dot lasers -- Si substrates -- continuous‐wave operation -- molecular beam epitaxy -- peak lasing wavelength -- low threshold current density -- GaAs buffer layer -- laser performance -- improved crystal quality -- CW QD laser -- topâ€"top contacts -- laser active layer -- high‐density defect -- monolithically integrated IIIâ€"V QD lasers -- wavelength 1.3 mum -- wavelength 1278 nm -- temperature 8 degC -- InAsâˆ'GaAs -- Siâˆ'GaAs; Optoelectronics -- Periodicals; 621.36
• DOI: 10.1049/iet-opt.2013.0093
• Languages: English
• ISSNs: 1751-8768

Abstract

Abstract : Continuous‐wave (CW) operation of InAs/GaAs quantum dot (QD) lasers monolithically grown on Si substrates by molecular beam epitaxy is presented. The peak lasing wavelength of 1278 nm is accompanied by a low threshold current density of 458 A/cm 2 at 8°C using a GaAs buffer layer directly grown on the Si substrates. The improvement in laser performance is due to improved crystal quality of the GaAs buffer layer. The demonstration of a CW QD laser also benefits from using top–top contacts, which route the current through the laser active layer to avoid the high‐density defects near the Si/GaAs interface. These results demonstrate the growing potential of the monolithically integrated III–V QD lasers on the Si substrates.