Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates. Issue 1 (1st February 2018)

• Record Type: Journal Article
• Authors: González Burguete, Claudia; Guo, Daqian; Jurczak, Pamela; Cui, Fan; Tang, Mingchu; Chen, Wei; Deng, Zhuo; Chen, Yaojiang; Gutiérrez, Marina; Chen, Baile; Liu, Huiyun; Wu, Jiang
• Is Part Of: IET optoelectronics. Volume 12:Issue 1(2018)
• Page Start: 2
• Page End: 4
• Publication Date: 2018-02-01
• Subjects: indium compounds -- gallium compounds -- III‐V semiconductors -- photodiodes -- silicon -- elemental semiconductors -- semiconductor superlattices -- p‐i‐n photodiodes -- atomic force microscopy -- X‐ray diffraction -- photoluminescence -- dark conductivity -- integrated optoelectronics -- semiconductor growth -- semiconductor epitaxial layers; type II superlattice photodiodes -- silicon substrates -- interfacial misfit array technique -- lattice mismatch -- epi‐layers -- atomic force microscopy -- X‐ray diffraction -- photoluminescence -- peak intensity -- dark current measurements -- electrical properties -- InAs‐GaSb -- Si; Optoelectronics -- Periodicals; 621.36
• DOI: 10.1049/iet-opt.2017.0078
• Languages: English
• ISSNs: 1751-8768

Abstract

Abstract : In this study, p‐i‐n InAs/GaSb type II superlattice photodiodes were directly grown on silicon substrates. The superlattice structures were grown monolithically on miscut Si substrates via a 10 nm AlSb nucleation layer. Interfacial misfit array technique was used to accommodate the large lattice mismatch between III‐Sb epi‐layers and Si. Atomic force microscopy and X‐ray diffraction measurements revealed degraded material quality of type II superlattices grown on Si, compared with the sample grown on GaAs. Photoluminescence characterisation indicates comparable optical properties with about 39% deduction of peak intensity. Dark current measurements were also used to study the electrical properties of the samples.