Effect of a thermodynamically consistent interface stress on thermal-induced nanovoid evolution in NiAl. (September 2021)

• Record Type: Journal Article
• Authors: Ghaedi, Mohammad Sadegh; Javanbakht, Mahdi
• Is Part Of: Mathematics and mechanics of solids. Volume 26:Number 9(2021)
• Page Start: 1320
• Page End: 1336
• Publication Date: 2021-09
• Subjects: Nanovoid evolution -- interface stress -- misfit strain -- phase field approach -- continuum thermodynamics; Materials -- Mechanical properties -- Periodicals; Solids -- Periodicals; Materials science -- Mathematics -- Periodicals; 620.11205
• DOI: 10.1177/1081286520986603
• Languages: English
• ISSNs: 1081-2865

Abstract

In the present work, the effect of a thermodynamically consistent inelastic interface stress on nanovoid evolution in NiAl is studied. Such interface stress is introduced for the solid–gas interface of nanovoids within the concept of the phase field approach. The Cahn–Hilliard (CH) equation using the Helmholtz free energy describes the evolution of nanovoid concentration. The interface stress changes the total stress distribution and affects the elastic stress field. Thus, due to the significant effect of the elastic energy on nanovoid dynamics, it can indirectly affect nanovoid nucleation and growth. The highly nonlinear coupled CH and elasticity equations are solved using the finite element method and the COMSOL code. The coupling appears due to the presence of the nonlinear nanovoid inelastic strain in the total strain, the presence of the nonlinear inelastic interface stress in the stress tensor and the presence of elastic energy in the Helmholtz free energy. Several examples of thermal-induced nanovoid evolutions are presented to investigate the effect of the solid–gas interface stress. The obtained results show the significant effect of the interface stress on the total stress distribution, and consequently a different distribution of thermodynamic driving force which can affect the nanostructure evolution and the deformation. Mainly, the interface stress represents a promotive effect on nanovoid growth which results in a faster nanovoid growth and a larger nanovoid concentration and region.