Influences of contact electrode shape and incidence direction on p‐i‐n photodiodes. Issue 4 (1st August 2019)

• Record Type: Journal Article
• Authors: Liu, Tao; Huang, Yongqing; Fei, Jiarui; Chen, Qingtao; Ma, Xiaokai; Duan, Xiaofeng; Liu, Kai; Ren, Xiaomin
• Is Part Of: IET optoelectronics. Volume 13:Issue 4(2019)
• Page Start: 151
• Page End: 154
• Publication Date: 2019-08-01
• Subjects: photoconductivity -- p-i-n photodiodes; contact electrode shape -- incidence direction -- p-i-n photodiodes -- vertical illumination direction -- ring-covered p-contact electrode -- FCC-PD -- RCC-PD -- mesa diameter -- fully-covered p-contact electrode -- p-side illumination -- n-side illumination -- output photocurrent -- size 40.0 mum -- voltage -3.0 V -- frequency 33.6 GHz -- current 7.0 mA; Optoelectronics -- Periodicals; 621.36
• DOI: 10.1049/iet-opt.2018.5037
• Languages: English
• ISSNs: 1751-8768

Abstract

Abstract : The influences of contact electrode shape and vertical illumination direction on the performance of p‐i‐n photodiodes (PDs) are studied by theory and experiment. The PDs with ring‐covered p‐contact electrode (RCC‐PD) and fully‐covered p‐contact electrode (FCC‐PD) were fabricated and tested. For the RCC‐PD, the influences of p‐side and n‐side illumination on the bandwidth also analysed. The results show that for the PDs with 40 μm mesa diameter under −3 V bias and 7.0 mA output photocurrent, a 40.6 and 31.6% increase of bandwidth and responsivity in the FCC‐PD compared with RCC‐PD. The 3 dB bandwidth and responsivity of the FCC‐PD with a 40 μm mesa diameter at −3 V bias can reach 33.6 GHz and 0.5 A/W, respectively.