Resistive‐switching and current‐conduction mechanisms in F8BT polymer resistive switch. (1st November 2016)

• Record Type: Journal Article
• Authors: Awais, Muhammad N.; Mustafa, Maria; Shehzad, Muhammad N.; Farooq, Umer; Hamayun, Mirza T.; Choi, Kyung H.
• Is Part Of: Micro & nano letters. Volume 11:Number 11(2016)
• Page Start: 712
• Page End: 714
• Publication Date: 2016-11-01
• Subjects: polymers -- semiconductor switches -- indium compounds -- tin compounds -- aluminium -- spin coating -- field emission electron microscopes -- scanning electron microscopes; resistive‐switching mechanisms -- current‐conduction mechanisms -- poly[(9, 9‐di‐n‐octylfluorenyl‐2, 7‐diyl)‐alt‐(benzo[2, 1, 3]thiadiazol‐4, 8‐diyl)] -- F8BT polymer resistive switch -- resistive‐switching properties -- indium tin oxide -- ITO -- aluminium -- polyethylene terepthalate -- spin coating -- field emission scanning electron microscope -- switching characteristics -- space charge‐limited conduction -- SCLC -- energy band diagram -- memory effects -- F8BT active layer -- voltage 5 V -- ITO -- Al; Nanotechnology -- Periodicals; Nanostructures -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1049/mnl.2016.0165
• Languages: English
• ISSNs: 1750-0443

Abstract

Abstract : Poly[(9, 9‐di‐n‐octylfluorenyl‐2, 7‐diyl)‐alt‐(benzo[2, 1, 3]thiadiazol‐4, 8‐diyl)] (F8BT) polymer has been investigated to elucidate the resistive‐switching properties in a sandwiched structure of indium tin oxide (ITO)/F8BT/aluminium (Al). An active layer of F8BT polymer was deposited on the ITO‐coated polyethylene terepthalate through spin coating. Morphologically, the layer was characterised with field emission scanning electron microscope. The fabricated sample showed resistive‐switching properties within ±5 V with an OFF/ON ratio of 10:1. The switching characteristics were attributed to the transition of trap‐limited space charge‐limited conduction (SCLC) to trap‐filled SCLC. It is shown through energy band diagram that memory effects in the fabricated sample were due to the trapping of electrons in the F8BT active layer that were injected from the top Al electrode.