Effect of incorporation of highly‐ordered a‐Ge:H nanoparticles on the performance of perovskite solar cells. (1st August 2018)

• Record Type: Journal Article
• Authors: Li, Zhenglong; Ni, Jian; Zhang, Shuaiyuan; Li, Chang; Du, Yangyang; Zhang, Yaofang; Cai, Hongkun; Li, Juan; Zhang, Jianjun
• Is Part Of: Micro & nano letters. Volume 13:Number 8(2018)
• Page Start: 1111
• Page End: 1116
• Publication Date: 2018-08-01
• Subjects: hydrogen -- germanium -- organic compounds -- elemental semiconductors -- amorphous semiconductors -- semiconductor thin films -- nanoparticles -- solar cells -- light absorption -- narrow band gap semiconductors -- nanofabrication -- plasma CVD -- semiconductor growth -- bonds (chemical) -- Raman spectra -- transmission electron microscopy -- Fourier transform infrared spectra; perovskite solar cells -- light absorption -- narrow band gap highly‐ordered free‐standing hydrogenated amorphous germanium nanoparticles -- radiofrequency plasma enhanced chemical vapour deposition -- hydrogen dilution ratio -- microstructure -- bonding configuration -- Raman spectroscopy -- transmission electron microscopy -- Fourier transform infrared spectroscopy -- ultrasonic spray‐coating -- visible range -- power conversion efficiency -- Ge:H; Nanotechnology -- Periodicals; Nanostructures -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1049/mnl.2017.0876
• Languages: English
• ISSNs: 1750-0443

Abstract

Abstract : To improve light absorption, in this study, the narrow band gap highly‐ordered free‐standing hydrogenated amorphous germanium nanoparticles (a‐Ge:H NPs) were introduced into the CH3 NH3 PbI3− x Cl x films. Here, the NPs were fabricated by means of the radio frequency plasma enhanced chemical vapour deposition system. The effects of hydrogen dilution ratio (RH) on the microstructure and bonding configuration of a‐Ge:H NPs were investigated by Raman, transmission electron microscopy and Fourier transform infrared spectroscopy measurements. As RH increases, an improvement in the structure order of a‐Ge:H NPs was observed. Compared with the pure CH3 NH3 PbI3− x Cl x films, the light absorption of the hybrid a‐Ge:H NPs/CH3 NH3 PbI3− x Cl x active layers was improved, and the surface coverage of the hybrid active layers nearly reached 100%. This new finding provided a novel way to solve the universal unfavourable surface coverage problem that existed in the ultrasonic spray‐coating process. Meanwhile, compared with the device that is based on pure CH3 NH3 PbI3− x Cl x films, due to the enhanced light absorption in the visible range, a ∼14.6% enhancement in the power conversion efficiency was achieved based on the hybrid a‐Ge:H NPs/CH3 NH3 PbI3− x Cl x active layers.