Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device reliability. (1st August 2018)

• Record Type: Journal Article
• Authors: Gupta, Sarthak; Sharma, Dheeraj; Soni, Deepak; Yadav, Shivendra; Aslam, Mohd.; Yadav, Dharmendra Singh; Nigam, Kaushal; Sharma, Neeraj
• Is Part Of: Micro & nano letters. Volume 13:Number 8(2018)
• Page Start: 1192
• Page End: 1196
• Publication Date: 2018-08-01
• Subjects: dielectric materials -- interface states -- semiconductor device reliability -- field effect transistors -- tunnel transistors -- semiconductor device breakdown -- carrier density; ITCs -- HD DMCG‐TFET -- interface trap charges -- dual material control gate tunnel field effect transistor -- dual metal control gate tunnel field effect transistors -- semiconductor/insulator interface; Nanotechnology -- Periodicals; Nanostructures -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1049/mnl.2017.0869
• Languages: English
• ISSNs: 1750-0443

Abstract

Abstract : In this work, the authors have reported the reliability issues of dual material control gate tunnel field effect transistor (DMCG‐TFET) and proposed heterogeneous gate dielectric dual metal control gate tunnel field effect transistors (HD DMCG‐TFETs) in terms of interface trap charges (ITCs). The positive and negative types of localised charges at the semiconductor/insulator interface cause degradation in the device performance (DC/RF). In this regard, the proposed structure which includes combination of low‐K and high‐K dielectric improves the immunity towards the ITCs at the interface of semiconductor/insulator with better performance. In this concern, the study has analysed the impact of ITCs on DC and analogue/RF performances of the DMCG‐TFET and HD DMCG‐TFET in terms of various parameters like electric field, energy band diagram, carrier concentration, transfer characteristics, transconductance ( g m ), cutoff frequency ( f T ) and gain bandwidth product. Further to this, impact on device linearity parameters is also analysed through higher order of transconductance coefficients ( g m 3 ), VIP2, VIP3 and IIP3.