A wafer-scale synthesis of monolayer MoS2 and their field-effect transistors toward practical applications. Issue 8 (15th March 2021)

• Record Type: Journal Article
• Authors: Liu, Yuchun; Gu, Fuxing
• Is Part Of: Nanoscale advances. Volume 3:Issue 8(2021)
• Page Start: 2117
• Page End: 2138
• Publication Date: 2021-03-15
• Subjects: 620.5
• DOI: 10.1039/d0na01043j
• Languages: English
• ISSNs: 2516-0230

Abstract

Abstract : We focus on recent advances in wafer-scale monolayer MoS2 synthesis and 2D MoS2 -FET for applications in logic gate circuits, memory devices and photodetectors, from fundamental MoS2 research to MoS2 devices development for next-generation electronics and optoelectronics. Abstract : Molybdenum disulfide (MoS2 ) has attracted considerable research interest as a promising candidate for downscaling integrated electronics due to the special two-dimensional structure and unique physicochemical properties. However, it is still challenging to achieve large-area MoS2 monolayers with desired material quality and electrical properties to fulfill the requirement for practical applications. Recently, a variety of investigations have focused on wafer-scale monolayer MoS2 synthesis with high-quality. The 2D MoS2 field-effect transistor (MoS2 -FET) array with different configurations utilizes the high-quality MoS2 film as channels and exhibits favorable performance. In this review, we illustrated the latest research advances in wafer-scale monolayer MoS2 synthesis by different methods, including Au-assisted exfoliation, CVD, thin film sulfurization, MOCVD, ALD, VLS method, and the thermolysis of thiosalts. Then, an overview of MoS2 -FET developments was provided based on large-area MoS2 film with different device configurations and performances. The different applications of MoS2 -FET in logic circuits, basic memory devices, and integrated photodetectors were also summarized. Lastly, we considered the perspective and challenges based on wafer-scale monolayer MoS2 synthesis and MoS2 -FET for developing practical applications in next-generation integrated electronics and flexible optoelectronics.