Cite
HARVARD Citation
Li, F. et al. (2021). Effects of substrate termination on Ron increase under stress in 650 V GaN power devices. Journal of physics. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Li, F. et al. (2021). Effects of substrate termination on Ron increase under stress in 650 V GaN power devices. Journal of physics. p. . [Online].