Effect of carbon ion-beam irradiation on graphene oxide film. (August 2018)

• Record Type: Journal Article
• Authors: Tyagi, Chetna; Khan, S.A.; Ojha, Sunil; Avasthi, D.K.; Tripathi, Ambuj
• Is Part Of: Vacuum. Volume 154(2018)
• Page Start: 259
• Page End: 263
• Publication Date: 2018-08
• Subjects: Graphene oxide -- Swift heavy ion -- Disorder parameter -- Thermal spike model -- Electronic energy loss -- Nuclear energy loss; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2018.05.003
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: The effect of Carbon ion beam on graphene oxide film (GO) is investigated using X-ray diffraction, Raman microscopy and Fourier Transform Infra-red (FTIR) spectroscopy. It is shown that defects were created in GO and water molecules detached from GO layer as evident from X-ray diffraction, Raman microscopy and FTIR spectroscopy. Theoretical simulations were performed using different parameters and concluded that the maximum lattice temperature raised (574 K) by ion beam irradiation was below the annealing and melting temperature of GO. Highlights: Graphene oxide films were synthesized and characterized. Irradiation of films was done using Carbon ion beam using different fluences: ∼10 11 - 10 13 ions/cm 2 . Defects were created using Carbon ion beam unlike Gold ion beam having high electronic energy loss. Theoretical simulations showed that lattice temperature of GO reached below its melting as well as annealing temperature.