Diameter dependence of the UV light detecting performance of InGaN/GaN nanorods array photodetector. (1st October 2018)
- Record Type:
- Journal Article
- Title:
- Diameter dependence of the UV light detecting performance of InGaN/GaN nanorods array photodetector. (1st October 2018)
- Main Title:
- Diameter dependence of the UV light detecting performance of InGaN/GaN nanorods array photodetector
- Authors:
- Kang, Yunlong
Wang, Ding
Wang, Ping
Chen, Aiying
Li, Huijun
Wang, Xianying
Yang, Junhe - Abstract:
- Abstract : Vertically aligned InGaN/GaN nanorod arrays with multiple quantum wells (MQWs) was prepared via inductively coupled plasma (ICP) followed by a further anisotropic wet etching method. It was demonstrated that the sizes of nanorods could be easily regulated in the ranges of 330–1090 nm by simply controlling the ICP etch parameters. The morphology characterisation results indicated that these nanorods are of straight and smooth appearance, and the length of nanorods is about 4 μm. Ultraviolet (UV) detectors based on nanorods arrays with different diameters were fabricated, which exhibited fast response/recovery speed and good response. The UV detecting performance was getting better with the decrease of nanorods diameter, which may be caused by the suppression of the dark current. This work provides an efficient route for fabricating the large‐scale vertical aligned MQWs nanorods array and developing their fascinating applications.
- Is Part Of:
- Micro & nano letters. Volume 13:Number 10(2018)
- Journal:
- Micro & nano letters
- Issue:
- Volume 13:Number 10(2018)
- Issue Display:
- Volume 13, Issue 10 (2018)
- Year:
- 2018
- Volume:
- 13
- Issue:
- 10
- Issue Sort Value:
- 2018-0013-0010-0000
- Page Start:
- 1437
- Page End:
- 1442
- Publication Date:
- 2018-10-01
- Subjects:
- ultraviolet detectors -- wide band gap semiconductors -- indium compounds -- nanosensors -- etching -- III‐V semiconductors -- photodetectors -- semiconductor quantum wells -- nanorods -- gallium compounds -- nanofabrication
InGaN/GaN nanorod arrays -- multiple quantum wells -- inductively coupled plasma -- anisotropic wet etching method -- ICP etch parameters -- ultraviolet detectors -- UV detecting performance -- large‐scale vertical aligned MQWs nanorods array -- diameter dependence -- UV light detecting performance -- InGaN/GaN nanorods array photodetector -- size 330.0 nm to 1090.0 nm -- InGaN/GaN
Nanotechnology -- Periodicals
Nanostructures -- Periodicals
Microtechnology -- Periodicals
620.5 - Journal URLs:
- http://digital-library.theiet.org/content/journals/mnl ↗
https://ietresearch.onlinelibrary.wiley.com/journal/17500443 ↗
http://www.theiet.org/ ↗ - DOI:
- 10.1049/mnl.2018.5160 ↗
- Languages:
- English
- ISSNs:
- 1750-0443
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5756.775460
British Library DSC - BLDSS-3PM
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- 16634.xml