Structural investigation of silicon nanowires with grazing incidence small angle X‐ray scattering. (1st October 2013)

• Record Type: Journal Article
• Authors: Buttard, Denis; Schülli, Tobias; Oehler, Fabrice; Gentile, Pascal
• Is Part Of: Micro & nano letters. Volume 8:Number 10(2013)
• Page Start: 709
• Page End: 712
• Publication Date: 2013-10-01
• Subjects: elemental semiconductors -- nanowires -- silicon -- X‐ray scattering; structural investigation -- silicon nanowires -- grazing incidence small angle X‐ray scattering -- wire morphology -- periodic fringes -- asymptotic behaviour -- scattering signal -- size 50 nm -- size 100 nm -- size 200 nm -- size 25 mum -- Si; Nanotechnology -- Periodicals; Nanostructures -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1049/mnl.2013.0405
• Languages: English
• ISSNs: 1750-0443

Abstract

Abstract : Presented is a structural investigation of silicon nanowires, which is conducted with grazing incidence small angle X‐ray scattering. The morphology of the wires is analysed following experimental measurements. Three diameters (50, 100 and 200 nm) are investigated in relation to the aspect ratio of the wires (length 25 µm). Periodic fringes because of the weak distribution of the diameter are observed on the experimental images. The asymptotic behaviour of the scattering signal along the qy direction is also analysed and presented.