Study of the characteristics of ohmic contact between metal electrodes and Cu2ZnSnS4 thin films. (1st January 2018)

• Record Type: Journal Article
• Authors: Long, Bo; Lin, Sile; Nsengiyumva, Walter; Lin, Lingyan
• Is Part Of: Micro & nano letters. Volume 13:Number 1(2018)
• Page Start: 27
• Page End: 30
• Publication Date: 2018-01-01
• Subjects: ohmic contacts -- electrodes -- semiconductor thin films -- vacuum deposition -- X‐ray diffraction -- Raman spectra -- scanning electron microscopy -- X‐ray chemical analysis -- copper compounds -- zinc compounds -- tin compounds -- silver -- indium -- aluminium -- titanium; ohmic contact -- metal electrodes -- thin films -- CZTS devices -- p‐type CZTS films -- thermal evaporation -- sulphurisation -- XRD -- Raman -- SEM -- EDX -- I–V characterisation system -- Cu2ZnSnS4‐Ag -- Cu2ZnSnS4‐In -- Cu2ZnSnS4‐Al -- Cu2ZnSnS4‐Ti; Nanotechnology -- Periodicals; Nanostructures -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1049/mnl.2017.0274
• Languages: English
• ISSNs: 1750-0443

Abstract

Abstract : Selection of ohmic contacts to Cu2 ZnSnS4 (CZTS) films is one of the most crucial tasks involved in the fabrication of efficient CZTS devices. In the present work, the formation of ohmic contact with the p‐type CZTS films was studied. The p‐type CZTS thin films were fabricated by thermal evaporation, followed by the subsequent sulphurisation in the atmosphere of N2 + H2 S (5%). Ag, In, Al and Ti were chosen as the metal electrodes of the CZTS‐based films. The characteristics of CZTS thin films and the structure of Mo/CZTS/ M ( M = Ag, In, Al and Ti) were investigated using XRD, Raman, SEM, and EDX, to name but a few. The ohmic contact property of the studied material was tested using an I – V characterisation system. The results showed that Al could form a high‐quality ohmic contact with the p‐type CZTS films among the metallic electrodes.