Cite
HARVARD Citation
Saha, R. et al. (2019). Deep insights into electrical parameters due to metal gate WFV for different gate oxide thickness in Si step FinFET. Micro & nano letters. pp. 384-388. [Online].
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Saha, R. et al. (2019). Deep insights into electrical parameters due to metal gate WFV for different gate oxide thickness in Si step FinFET. Micro & nano letters. pp. 384-388. [Online].