Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization. (13th February 2015)

• Record Type: Journal Article
• Authors: Han, Cheng; Xiang, Du; Zheng, Minrui; Lin, Jiadan; Zhong, Jianqiang; Haur Sow, Chorng; Chen, Wei
• Is Part Of: Nanotechnology. Volume 26:Number 9(2015)
• Publication Date: 2015-02-13
• Subjects: ZnO nanowire -- surface functionalization -- MoO3 -- HATCN -- in situ FET characterization -- in situ photoelectron spectroscopy -- carrier depletion; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/26/9/095202
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Using in situ field effect transistor (FET) characterization combined with the molecular beam epitaxy technique, we demonstrate a significant depletion of electron charge carriers in single zinc oxide (ZnO) nanowire through the surface modification with molybdenum trioxide (MoO3 ) and 1, 4, 5, 8, 9, 11-hexaazatriphenylene hexacarbonitrile (HATCN) layers. The electron mobility of ZnO nanowire was found to sharply decrease after the surface modification with MoO3 ; in contrast, the electron mobility significantly increased after functionalization with HATCN layers. Such depletion of n-type conduction originates from the interfacial charge transfer, corroborated by in situ photoelectron spectroscopy studies. The air exposure effect on MoO3 - and HATCN-coated ZnO nanowire devices was also investigated.