Embedded purification for electron beam induced Pt deposition using MeCpPtMe3. (13th February 2015)

• Record Type: Journal Article
• Authors: Villamor, E; Casanova, F; Trompenaars, P H F; Mulders, J J L
• Is Part Of: Nanotechnology. Volume 26:Number 9(2015)
• Publication Date: 2015-02-13
• Subjects: EBID -- platinum -- high purity; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/26/9/095303
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Two different room-temperature processes for the electron beam induced deposition of high purity platinum (Pt), using the standard MeCpPtMe3 precursor and oxygen for purification, have been investigated. The first process is a sequential method, which uses two independent gas injector systems (GIS) in order to perform a standard Pt deposition, followed by an e-beam post-irradiation under oxygen flux. The second process is a parallel, single-step process that includes a simultaneous flow of both precursor and oxygen, using an add-on device that can be mounted on the standard GIS needle. Both processes are effective in producing high purity Pt depositions close to 100 at%. The first method requires a high current and irradiation dose in the clean-up phase, and provides Pt structures with small voids, a maximum thickness of around 100 nm and resistivity of 88 ± 10 μΩ cm. The second method requires a high oxygen/precursor flux ratio and produces void-free structures with resistivity of 60 ± 5 μΩ cm, only six times the bulk value for Pt. The second method is easier to use and produces a void-free deposition of high purity Pt.