High sensitivity vanadium–vanadium pentoxide–aluminium metal–insulator–metal diode. (1st May 2018)

• Record Type: Journal Article
• Authors: Abdel‐Rahman, Mohamed; Issa, Khaled; Zia, Muhammad F.; Alduraibi, Mohammad; Siraj, Mohammad; Ragheb, Amr; Alshebeili, Saleh
• Is Part Of: Micro & nano letters. Volume 13:Number 5(2018)
• Page Start: 680
• Page End: 683
• Publication Date: 2018-05-01
• Subjects: MIM devices -- sputter deposition -- aluminium -- X‐ray photoelectron spectra -- electron beam lithography -- vanadium -- vanadium compounds -- thin film devices -- insulating thin films -- semiconductor diodes; high sensitivity vanadium–vanadium pentoxide–aluminium metal–insulator–metal diode -- asymmetric structure diode -- MIM diode -- sputter deposition -- metal liftoff techniques -- insulating thin film -- dynamic resistance -- electrical characterisation -- X‐ray photoelectron spectroscopy analysis -- electron‐beam lithography -- voltage ‐316.0 mV -- voltage ‐8.52 V -- V‐V2O5‐Al; Nanotechnology -- Periodicals; Nanostructures -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1049/mnl.2017.0728
• Languages: English
• ISSNs: 1750-0443

Abstract

Abstract : This work reports on the fabrication of an improved sensitivity metal–insulator–metal (MIM) diode. They devise an asymmetric structure diode that cascades vanadium, vanadium pentoxide, and aluminium (V–V2 O5 –Al) thin film layers. The MIM diode is fabricated using electron‐beam lithography, sputter deposition and metal liftoff techniques. X‐ray photoelectron spectroscopy analysis is performed to determine the phase composition of the V2 O5 insulating thin film. Electrical characterisation of the fabricated V–V2 O5 –Al shows a clear high sensitivity at −316 mV that reaches −8.52 V −1 with a dynamic resistance of 5.024 kΩ.