Charge character in the double‐barrier quantum dots in well hybrid structure. (1st October 2015)

• Record Type: Journal Article
• Authors: Ning, Wenguo; Wang, Weiwei; Jin, Xiaobo; Guo, Fangmin; Yue, Fangyu
• Is Part Of: Micro & nano letters. Volume 10:Number 10(2015)
• Page Start: 533
• Page End: 536
• Publication Date: 2015-10-01
• Subjects: semiconductor quantum dots -- semiconductor quantum wells -- capacitance -- indium compounds -- gallium arsenide -- III‐V semiconductors; charge character -- double‐barrier quantum dots -- capacitance hysteresis -- quantum well hybrid structure -- carrier transport properties -- photoelectric device -- coupling effect -- I–V curves -- C–V curves -- light intensity -- dumping readout -- weak light illumination -- InAs -- InGaAs; Nanotechnology -- Periodicals; Nanostructures -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1049/mnl.2015.0188
• Languages: English
• ISSNs: 1750-0443

Abstract

Abstract : The charge character in the double‐barrier quantum dots (QDs) in a well hybrid structure is investigated experimentally and numerically. The capacitance hysteresis phenomenon of a double‐barrier InAs QDs and InGaAs quantum well hybrid structure is reported, as well as the carrier transport properties in the photoelectric device. Due to the coupling effect among multiple QDs, the photoelectric device's measured I – V and C – V curves show that the capacitance changes with the light intensity. When the dumping readout designed, it can enhance the sensitivity of the device at weak light illumination. This indicates that the photoelectric device has the potential to be a promising candidate both in quantum information applications and highly sensitive imaging applications.