A broadband hybrid GaN cascode low noise amplifier for WiMax applications. Issue 10 (4th September 2018)

• Record Type: Journal Article
• Authors: Jarndal, Anwar H.; Bassal, Amer M.
• Is Part Of: International journal of RF and microwave computer-aided engineering. Volume 29:Issue 10(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-09-04
• Subjects: GaN HEMT -- independent biasing -- interstage matching -- low noise amplifier -- WiMax; Microwave devices -- Computer-aided design -- Periodicals; Computer-aided engineering -- Periodicals; 621.3813
• DOI: 10.1002/mmce.21456
• Languages: English
• ISSNs: 1096-4290

Abstract

Abstract: This article reports a Microstrip design for low noise amplifier (LNA) using a packaged commercial GaN‐on‐SiC high electron mobility transistor (HEMT). A cascode configuration with an inter‐stage matching and an independent biasing technique was used. A lumped elements design was first developed, analyzed, and simulated in ADS. Then the design was implemented using microstrip technology and simulated using the momentum EM simulation in ADS. The LNA is easy to fabricate, has a low cost, and can be easily modified for other applications. The proposed GaN LNA showed a gain of 13.5 dB with a noise figure (NF) of 3 dB from 2.8 to 3.8 GHz.