GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels. Issue 4 (23rd February 2018)

• Record Type: Journal Article
• Authors: Nakajima, Akira; Kubota, Shunsuke; Tsutsui, Kazuo; Kakushima, Kuniyuki; Wakabayashi, Hitoshi; Iwai, Hiroshi; Nishizawa, Shin‐ichi; Ohashi, Hiromichi
• Is Part Of: IET power electronics. Volume 11:Issue 4(2018)
• Page Start: 689
• Page End: 694
• Publication Date: 2018-02-23
• Subjects: gallium compounds -- III‐V semiconductors -- MOSFET -- two‐dimensional hole gas -- two‐dimensional electron gas -- wide band gap semiconductors; gallium nitride‐based complementary metal‐oxide‐semiconductor inverter -- normally off Pch MOSFET -- normally off Nch MOSFET -- polarisation‐induced holes -- electron channels -- P‐channel metal‐oxide‐semiconductor field‐effect transistors -- N‐channel metal‐oxide‐semiconductor field‐effect transistors -- polarisation‐junction platform wafer -- gallium nitride‐aluminium gallium nitride‐gallium nitride double heterostructure -- two‐dimensional hole gas -- 2DHG -- 2D electron gas -- drain currents -- threshold gate voltages -- threshold voltage -- on‐state resistance -- 2DEG potential -- complementary MOS inverter operation; Power electronics -- Periodicals; 621.31705
• DOI: 10.1049/iet-pel.2017.0376
• Languages: English
• ISSNs: 1755-4535

Abstract

Abstract : Gallium nitride (GaN)‐based P‐channel (Pch) and N‐channel (Nch) metal–oxide–semiconductor field‐effect transistors (MOSFETs) with normally off operations were realised. Both Pch and Nch MOSFETs were monolithically fabricated in a polarisation‐junction platform wafer. The platform wafer was constructed with a GaN/aluminium GaN/GaN double heterostructure, which has both two‐dimensional hole gas (2DHG) and 2D electron gas (2DEG). The drain currents of Pch and Nch MOSFETs flow through 2DHG and 2DEG, respectively. The threshold gate voltages of the fabricated Pch and Nch MOSFETs were −2.7 and 6.7 V, respectively. It was shown that the threshold voltage and the on‐state resistance of the Pch MOSFET can be controlled by adjusting the 2DEG potential. Furthermore, using Pch and Nch MOSFETs, complementary MOS inverter operation was demonstrated.