10 MHz boost converter with subthreshold voltage startup and predictive dead‐time techniques for energy‐harvesting systems. Issue 10 (1st August 2020)

• Record Type: Journal Article
• Authors: Huang, Wenbin; Liao, Xufeng; Liu, Lianxi
• Is Part Of: IET power electronics. Volume 13:Issue 10(2020)
• Page Start: 2139
• Page End: 2148
• Publication Date: 2020-08-01
• Subjects: energy harvesting -- CMOS integrated circuits -- transient response -- predictive control -- feedforward -- power convertors; subthreshold voltage startup -- dead‐time techniques -- energy‐harvesting systems -- synchronous boost converter -- subthreshold startup scheme -- predictive dead‐time control -- input feed‐forward technique -- three‐stage startup technique -- extra startup circuits -- high‐frequency converter -- input voltage -- minimum startup voltage -- standard complimentary metal oxide semiconductor process -- line transient response -- input feedforward technique -- fast line response -- voltage 0.3 V to 1.5 V -- frequency 10.0 MHz -- size 0.18 mum -- voltage 1.8 V -- current 150.0 mA; Power electronics -- Periodicals; 621.31705
• DOI: 10.1049/iet-pel.2019.1226
• Languages: English
• ISSNs: 1755-4535

Abstract

Abstract : A 10 MHz synchronous boost converter with the subthreshold startup scheme and predictive dead‐time control for energy‐harvesting systems is presented in this study. The input feed‐forward technique is adopted to achieve a fast line response, and a three‐stage startup technique is proposed to realise subthreshold voltage startup without using any extra startup circuits or special devices. Moreover, the efficiency of the high‐frequency converter can be improved by the proposed predictive dead‐time control with a high resolution of ∼300 ps. The proposed converter is implemented in a standard 0.18 μm complimentary metal oxide semiconductor process and occupies a die area of 1.4 × 1.5 mm 2 . Experimental results show that the input voltage ranges from 0.3 to 1.5 V at 1.8 V output, and the minimum startup voltage is 0.3 V. Under V IN = 1.5 V, V OUT = 1.8 V and 150 mA load, the power efficiency can be improved by 2.6% because of the proposed predictive dead‐time control. The peak efficiency can reach 90.7% under V IN = 1.5 V. The line transient response can be improved with small overshoot voltage at the output.