Non‐isolated DC–DC converter with a high‐voltage conversion ratio. Issue 16 (20th October 2020)

• Record Type: Journal Article
• Authors: Shayeghi, Hossein; Pourjafar, Saeed; Maalandish, Mohammad; Nouri, Soheil
• Is Part Of: IET power electronics. Volume 13:Issue 16(2020)
• Page Start: 3797
• Page End: 3806
• Publication Date: 2020-10-20
• Subjects: switching convertors -- DC‐DC power convertors -- zero voltage switching -- zero current switching -- power MOSFET; clamp circuit -- suggested converter -- power metal–oxide–semiconductor field‐effect transistor -- ON‐state resistance -- simple control circuit -- high‐voltage conversion ratio -- novel nonisolated boost DC–DC converter -- high‐voltage gain -- voltage lift circuit -- peak voltage -- active switch -- power 200.0 W -- frequency 25.0 kHz; Power electronics -- Periodicals; 621.31705
• DOI: 10.1049/iet-pel.2019.1014
• Languages: English
• ISSNs: 1755-4535

Abstract

Abstract : This work introduces a novel non‐isolated boost DC–DC converter with high‐voltage gain and high efficiency. The magnetic coupling and voltage lift circuit technique has been utilised to enhance the voltage conversion ratio. In order to decrease the peak voltage across the active switch, the voltage lift circuit acts as a clamp circuit. The zero current switching in the OFF‐state and the zero voltage switching in the ON‐state of diodes are other advantages of the suggested converter which leads to approach high efficiency by decreasing the conduction losses. In addition, only one power metal–oxide–semiconductor field‐effect transistor with lower ON‐state resistance is employed, which can provide the simple control circuit of the proposed topology. For demonstrating the performance of the proposed structure, the principle of operation modes and comparison results with other previous works is carried out. Finally, experimental results with a 200 W power level at 25 kHz operating frequency are prepared, which validate the usefulness of the proposed converter.