Comparison of SiC MOSFET‐based and GaN HEMT‐based high‐efficiency high‐power‐density 7.2 kW EV battery chargers. Issue 11 (7th August 2018)

• Record Type: Journal Article
• Authors: Taylor, Allan; Lu, Juncheng; Zhu, Liyan; Bai, Kevin (Hua); McAmmond, Matt; Brown, Alan
• Is Part Of: IET power electronics. Volume 11:Issue 11(2018)
• Page Start: 1849
• Page End: 1857
• Publication Date: 2018-08-07
• Subjects: switching convertors -- battery chargers -- matrix convertors -- III‐V semiconductors -- power factor correction -- gallium compounds -- silicon compounds -- battery powered vehicles -- wide band gap semiconductors -- electric vehicle charging -- MOS integrated circuits -- HEMT integrated circuits -- power integrated circuits; wide‐bandgap devices -- medium‐to‐high‐voltage -- thermal capability -- head‐to‐head comparison -- power density -- thermal performance -- power factor correction -- power delivery -- wide output range -- switching performance -- SiC MOSFET‐based high‐efficiency high‐power‐density EV battery chargers -- GaN HEMT‐based high‐efficiency high‐power‐density EV battery chargers -- indirect matrix converter -- dual‐active‐bridge stage handling -- control strategy -- phase‐shift frequency -- switching frequency -- voltage 1200.0 V -- voltage 650.0 V -- power 7.2 kW -- voltage 200.0 V to 450 V -- GaN -- SiC; Power electronics -- Periodicals; 621.31705
• DOI: 10.1049/iet-pel.2017.0467
• Languages: English
• ISSNs: 1755-4535

Abstract

Abstract : As two exemplary candidates of wide‐bandgap devices, SiC MOSFETs and GaN HEMTs are regarded as successors of Si devices in medium‐to‐high‐voltage (>1200 V) and low‐voltage (<650 V) domains, respectively, thanks to their excellent switching performance and thermal capability. With the introduction of 650 V SiC MOSFETs and GaN HEMTs, the two technologies are in direct competition in <650 V domains, such as Level 2 battery chargers for electric vehicles (EVs). This study applies 650 V SiC and GaN to two 240 VAC/7.2 kW EV battery chargers, respectively, aiming to provide a head‐to‐head comparison of these two devices in terms of overall efficiency, power density, thermal performance, and cost. The charger essentially is an indirect matrix converter with a dual‐active‐bridge stage handling the power factor correction and power delivery simultaneously. These two chargers utilise the same control strategy, varying the phase‐shift and switching frequency to cover the wide input range (80–260 VAC) and wide output range (200 V–450 VDC). Experimental results indicated that at the same efficiency level, the GaN charger is smaller, more efficient and cheaper, while the SiC charger has a better thermal performance.