Modelling the threshold voltage of p‐channel enhancement‐mode GaN heterostructure field‐effect transistors. Issue 4 (1st April 2018)

• Record Type: Journal Article
• Authors: Kumar, Ashwani; De Souza, Maria Merlyne
• Is Part Of: IET power electronics. Volume 11:Issue 4(2018)
• Page Start: 675
• Page End: 680
• Publication Date: 2018-04-01
• Subjects: gallium compounds -- III‐V semiconductors -- wide band gap semiconductors -- aluminium compounds -- MOSFET -- two‐dimensional hole gas -- technology CAD (electronics); threshold voltage modelling -- p‐channel enhancement‐mode heterostructure field‐effect transistor -- p‐channel metal‐oxide‐semiconductor heterostructure field‐effect transistor -- polarisation induced two‐dimensional hole gas -- depletion mode -- TCAD simulation -- AlGaN‐GaN‐AlGaN‐GaN; Power electronics -- Periodicals; 621.31705
• DOI: 10.1049/iet-pel.2017.0438
• Languages: English
• ISSNs: 1755-4535

Abstract

Abstract : p‐Channel gallium nitride (GaN) metal–oxide–semiconductor heterostructure field‐effect transistors utilising a polarisation induced two‐dimensional hole gas operate inherently in depletion mode. The condition for their conversion to enhancement‐mode operation is examined via analytical expressions for the threshold voltage and verified via technology computer‐aided design (TCAD) simulations. Between the two heterostructures: (i) conventional GaN/aluminium GaN (AlGaN)/GaN and (ii) alternate AlGaN/GaN/AlGaN/GaN examined in this work, the authors demonstrate at higher threshold voltage ( > − 2 V ), the alternate heterostructure can potentially achieve a higher on‐current by a factor of 2 of ( ∼ 30 mA / mm ), without degradation in the on–off‐current ratio, expected ideally to be of the order of ∼ 12 .