Optimisation of the I–V measurement scan time through dynamic modelling of solar cells. Issue 1 (1st January 2013)

• Record Type: Journal Article
• Authors: Herman, Matic; Jankovec, Marko; Topič, Marko
• Is Part Of: IET renewable power generation. Volume 7:Issue 1(2013)
• Page Start: 63
• Page End: 70
• Publication Date: 2013-01-01
• Subjects: curve fitting -- elemental semiconductors -- silicon -- solar cells -- transient response; I‐V measurement scan time optimisation -- solar cell dynamic modelling -- high‐performance solar cells -- photovoltaic modules -- transient response -- current‐voltage characteristic scan -- model‐based method -- current‐voltage performance characterisation -- static model parameter -- quasistatic current‐voltage characteristic -- bias voltage‐dependent capacitance -- open‐circuit voltage decay measurement -- optimal current‐voltage curve scan time -- wafer‐based solar cells -- curve fitting -- crystalline silicon solar cells -- constant angle step semiconductor curve tracer -- capacitive‐based curve tracer -- time 3.6 ms to 45 ms -- Si; Renewable energy sources -- Periodicals; 333.79405
• DOI: 10.1049/iet-rpg.2012.0020
• Languages: English
• ISSNs: 1752-1416

Abstract

Abstract : High‐performance solar cells and photovoltaic modules exhibit high internal capacitance, limiting the speed of their transient responses including the current–voltage characteristics scans. This study proffers a model‐based method to obtain optimal scan time during the current–voltage performance characterisation of a solar cell or module while preserving a pre‐set accuracy. Static model parameters are extracted from the quasi‐static current–voltage characteristic, whereas the capacitive character, modelled by two bias voltage dependent capacitances, is determined from the open‐circuit voltage decay measurement. The obtained model is used to calculate the optimal current–voltage curve scan time. Efficacy of the proposed method is demonstrated through test results obtained on three wafer‐based solar cells. I–V curve errors determined by the proposed method at different scan times are in good agreement with the measurements. Results show that in order to achieve < 0.5% error in curve fitting, determined scan times of tested crystalline silicon solar cells lie within the range of 3.6–45 ms for constant angle step semiconductor curve tracer. Use of a capacitive‐based curve tracer, however, requires approximately twice that time to retain a comparable error.