11 Gb/s 140 GHz OOK modulator with 24.6 dB isolation utilising cascaded switch and amplifier‐based stages in 65 nm bulk CMOS. Issue 3 (4th March 2020)

• Record Type: Journal Article
• Authors: Yamazaki, Daisuke; Otsuki, Yoshitaka; Hara, Takafumi; Khanh, Nguyen Ngoc Mai; Iizuka, Tetsuya
• Is Part Of: IET circuits, devices & systems. Volume 14:Issue 3(2020)
• Page Start: 322
• Page End: 326
• Publication Date: 2020-03-04
• Subjects: CMOS integrated circuits -- amplitude shift keying -- modulators -- millimetre wave amplifiers -- field effect MIMIC; OOK modulator -- amplifier-based stages -- complementary metal–oxide–semiconductor -- ON-state insertion loss -- cascaded architecture -- bulk CMOS process -- on–off-keying modulator -- switch-based modulators -- amplifier-based modulators -- power consumption -- frequency 140.0 GHz -- size 65.0 nm -- power 8.0 mW -- gain 0.3 dB -- bit rate 11 Gbit/s; Electronic circuits -- Periodicals; Electronic systems -- Periodicals; 621.381505
• DOI: 10.1049/iet-cds.2019.0377
• Languages: English
• ISSNs: 1751-858X

Abstract

Abstract : This study presents a complementary metal–oxide–semiconductor (CMOS) 140 GHz on–off‐keying (OOK) modulator with high isolation and low ON‐state insertion loss based on a cascaded architecture of a switch‐based and amplifier‐based modulators. A prototype implemented in a 65 nm bulk CMOS process operates at 140 GHz carrier input and realises 24.6 dB isolation, whereas in ON‐state it achieves 0.3 dB gain and −0.2 dBm OP1 dB with 8 mW power consumption. Up to 11 Gb/s modulation is verified with the spectrum and demodulated waveform measurements. The proposed OOK modulator occupies the core area of 250×380 μm 2 .