Noise analysis of reflection‐type microwave RTD amplifier. Issue 7 (30th September 2020)
- Record Type:
- Journal Article
- Title:
- Noise analysis of reflection‐type microwave RTD amplifier. Issue 7 (30th September 2020)
- Main Title:
- Noise analysis of reflection‐type microwave RTD amplifier
- Authors:
- Lee, Jongwon
Lee, Jooseok - Abstract:
- Abstract : This study reports an analysis of noise figures (NFs) in a reflection‐type microwave amplifier using resonant tunnelling diodes (RTDs). The minimum NF for the RTD amplifier based on 0.9 μm InP process technology, featuring a power gain ( S 21 ) of 10.4 dB and a dc‐power consumption of 133 μW at a centre frequency of 5.7 GHz, is measured to be 5.08 dB at a bias voltage of 0.355 V. The estimated NF characteristic based on an equation of the noise factor caused by the shot noise ( F SH ) and a simulation of the noise factor generated by the thermal noise ( F TH ) closely matches the measured NF characteristic, in the high‐gain bias range of 0.32–0.38 V and near the centre frequency. It is found that the measured NF value of 5.08 dB originates mostly from the F SH of 1.88 and the F TH of 2.02. Additionally, the effect of the RTD parameters on the achieved NF is investigated, indicating that the negative resistance ( R D ) magnitude had a dominant effect on the NF by changing the F TH as well as the F SH .
- Is Part Of:
- IET circuits, devices & systems. Volume 14:Issue 7(2020)
- Journal:
- IET circuits, devices & systems
- Issue:
- Volume 14:Issue 7(2020)
- Issue Display:
- Volume 14, Issue 7 (2020)
- Year:
- 2020
- Volume:
- 14
- Issue:
- 7
- Issue Sort Value:
- 2020-0014-0007-0000
- Page Start:
- 966
- Page End:
- 971
- Publication Date:
- 2020-09-30
- Subjects:
- low‐power electronics -- MMIC amplifiers -- shot noise -- III‐V semiconductors -- thermal noise -- indium compounds -- resonant tunnelling diodes -- integrated circuit modelling
noise analysis -- reflection‐type microwave RTD amplifier -- noise figures -- resonant tunnelling diodes -- power gain -- dc‐power consumption -- bias voltage -- noise factor -- shot noise -- FSH -- thermal noise -- FTH -- high‐gain bias range -- RTD parameters -- NF characteristic -- negative resistance magnitude -- size 0.9 mum -- power 133.0 muW -- frequency 5.7 GHz -- noise figure 5.08 dB -- voltage 0.355 V -- voltage 0.32 V to 0.38 V -- gain 10.4 dB -- InP
Electronic circuits -- Periodicals
Electronic systems -- Periodicals
621.381505 - Journal URLs:
- https://ietresearch.onlinelibrary.wiley.com/journal/17518598 ↗
http://ieeexplore.ieee.org/servlet/opac?punumber=4123966 ↗
http://www.theiet.org/ ↗
http://digital-library.theiet.org/content/journals/iet-cds ↗
http://www.ietdl.org/IET-CDS ↗ - DOI:
- 10.1049/iet-cds.2020.0078 ↗
- Languages:
- English
- ISSNs:
- 1751-858X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 4363.252190
British Library DSC - BLDSS-3PM
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- 16494.xml