Cite
HARVARD Citation
Bose, R. et al. (2019). 2D Surface potential and mobility modelling of doped/undoped symmetric double gate MOSFET. IET circuits, devices & systems. 13 (5), pp. 571-575. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Bose, R. et al. (2019). 2D Surface potential and mobility modelling of doped/undoped symmetric double gate MOSFET. IET circuits, devices & systems. 13 (5), pp. 571-575. [Online].