Electrical Derivative Measurement of High‐Power InGaAs LDs Under Scanning Current with Variable Step. Issue 3 (1st May 2017)

• Record Type: Journal Article
• Authors: Tao, Min; Guan, Jian; Gao, Fengli; Gao, Liangli; Cao, Junsheng
• Is Part Of: Chinese journal of electronics. Volume 26:Issue 3(2017)
• Page Start: 508
• Page End: 513
• Publication Date: 2017-05-01
• Subjects: Semiconductor laser diodes (LDs) -- Electrical derivative -- Scanning current -- Wavelet transform -- Singularity detection; III‐V semiconductors -- indium compounds -- semiconductor device measurement -- semiconductor lasers -- wavelet transforms; electrical derivative measurement -- high‐power LD -- high‐power semiconductor laser diodes -- scanning driving current -- variable step length -- threshold current -- voltage‐current characteristic -- luminous power‐current relation -- electrical derivative curve -- wavelet transformation singularity testing -- InGaAs; Electronics -- Periodicals; Electronics -- China -- Periodicals; Electronics; China; Periodicals; 621.38105
• DOI: 10.1049/cje.2017.03.006
• Languages: English
• ISSNs: 1022-4653

Abstract

Abstract : For the large driving current of high‐power semiconductor Laser diodes (LDs), a modified method to measure the electrical derivative of LDs under scanning driving current with variable step length is proposed, which is to achieve the fast and accurate measurement of optical and electrical characteristic parameters of LDs with a relatively small data acquisition. The experimental results show that, with fewer measurements, this method can effectively and accurately measure and extract the LDs corresponding parameters including threshold current ( Ith ), voltage‐current characteristic ( V‐I ), luminous power‐current relation ( P‐I ), electrical derivative curve ( IdV/dI‐I ). The wavelet transformation singularity testing results of the threshold current also verify the accuracy, reliability, and advantage of this method.