Research on a Ka‐Band MEMS Power Sensor Investigated with an MEMS Cantilever Beam. Issue 2 (1st March 2020)

• Record Type: Journal Article
• Authors: Wang, Debo; Gu, Xinfeng; Xie, Jiangcheng; Zhang, Dong
• Is Part Of: Chinese journal of electronics. Volume 29:Issue 2(2020)
• Page Start: 378
• Page End: 384
• Publication Date: 2020-03-01
• Subjects: Power sensor -- Sensitivity -- Overload power -- Micro‐electro‐mechanical system (MEMS) -- Cantilever beam; cantilevers -- capacitance measurement -- capacitive sensors -- gallium arsenide -- III‐V semiconductors -- micromachining -- microsensors -- millimetre wave detectors -- millimetre wave measurement -- power measurement; micromachining -- Ka‐band MEMS power sensor -- thermoelectric microwave power sensors -- overload power measurements -- microelectromechanical system cantilever beam -- MEMS cantilever beam -- frequency 36.0 GHz -- frequency 34.0 GHz -- frequency 35.0 GHz -- GaAs; Electronics -- Periodicals; Electronics -- China -- Periodicals; Electronics; China; Periodicals; 621.38105
• DOI: 10.1049/cje.2020.02.002
• Languages: English
• ISSNs: 1022-4653

Abstract

Abstract : In this work, a novel high overload Ka‐band power sensor with a Micro‐electro‐mechanical system (MEMS) cantilever beam is investigated in order to improve the measurement dynamic range and the bandwidth. The fabrication of the Ka‐band power sensor is divided into front side and back side processing with a combination of surface and bulk micromachining of GaAs. The low‐power measurement reveals that the terminating‐type sensitivity is close to 0.081, 0.076 and 0.072mV/mW at 34, 35 and 36GHz, respectively. The high‐power measurement indicates that the capacitivetype sensitivity is around 4.9fF/W at Ka‐band. The overload power measurements show that the MEMS cantilever beam can improve the dynamic range by increasing the top end of the range into no less than 200mW, and enhance the bandwidth by increasing the top end of the range into no less than 36GHz. There is an important reference value to achieve the high overload and wide frequency band for the thermoelectric microwave power sensors.