A 5.7–6.4GHz GaAs HBT Power Amplifier with a Gain Enhanced Bias Circuit. Issue 3 (1st May 2017)
- Record Type:
- Journal Article
- Title:
- A 5.7–6.4GHz GaAs HBT Power Amplifier with a Gain Enhanced Bias Circuit. Issue 3 (1st May 2017)
- Main Title:
- A 5.7–6.4GHz GaAs HBT Power Amplifier with a Gain Enhanced Bias Circuit
- Authors:
- Zheng, Ruiqing
Zhang, Guohao
Yu, Kai
Li, Sizhen
Zheng, Yaohua - Abstract:
- Abstract : This paper describes the design of a 5.7– 6.4GHz GaAs Heterojunction bipolar transistor (HBT) power amplifier for broadband wireless application such as wireless metropolitan area networks. A bias circuit is proposed which enhances the power gain and provides a good linearity. Using the wideband matching network techniques with trap circuits embedded to filter the harmonics and the diode‐based linearizing techniques, a broadband power amplifier module was obtained which exhibited a gain above 28dB. This is about 1dB improvement compared with those normal bias circuits at a supply voltage of 5V in the frequency range of 5.7–6.4GHz, measured with Continuous wave(CW) signals. The saturated output power was greater than 33dBm in 5.7–6.4GHz and the output 1dB compression point was greater than 31dBm. The phase deviation was less than 5 degrees when the output power below 33dBm. The second and third order harmonic components were also less than − 45dBc and − 50dBc.
- Is Part Of:
- Chinese journal of electronics. Volume 26:Issue 3(2017)
- Journal:
- Chinese journal of electronics
- Issue:
- Volume 26:Issue 3(2017)
- Issue Display:
- Volume 26, Issue 3 (2017)
- Year:
- 2017
- Volume:
- 26
- Issue:
- 3
- Issue Sort Value:
- 2017-0026-0003-0000
- Page Start:
- 502
- Page End:
- 507
- Publication Date:
- 2017-05-01
- Subjects:
- Broadband wireless application -- Bias circuit -- GaAs Heterojunction bipolar transistor -- Power amplifier -- Wireless metropolitan area network (WMAN)
gallium arsenide -- heterojunction bipolar transistors -- microwave power amplifiers -- wideband amplifiers
GaAs Heterojunction bipolar transistor power amplifier -- GaAs HBT power amplifier -- broadband wireless application -- wireless metropolitan area networks -- bias circuit -- power gain -- wideband matching network techniques -- trap circuits -- diode‐based linearizing techniques -- broadband power amplifier module -- continuous wave signals -- second order harmonic components -- third order harmonic components -- frequency 5.7 GHz to 6.4 GHz -- voltage 5 V -- GaAs
Electronics -- Periodicals
Electronics -- China -- Periodicals
Electronics
China
Periodicals
621.38105 - Journal URLs:
- https://ietresearch.onlinelibrary.wiley.com/journal/20755597 ↗
http://ieeexplore.ieee.org/servlet/opac?punumber=7479413 ↗
http://ieeexplore.ieee.org/Xplore/home.jsp ↗ - DOI:
- 10.1049/cje.2016.11.013 ↗
- Languages:
- English
- ISSNs:
- 1022-4653
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
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- British Library DSC - 3180.317180
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- 16464.xml