Robustness‐oriented P‐band phased array radar front‐end with high phase and gain resolution in 0.18 μm BiCMOS. Issue 9 (15th May 2020)

• Record Type: Journal Article
• Authors: Wu, Wen‐Guang; Fang, Yun; Yu, Xiao‐Peng; Sui, Wen‐Quan; Chen, Jer‐Ming; Yeo, Kiat Seng
• Is Part Of: IET microwaves, antennas & propagation. Volume 14:Issue 9(2020)
• Page Start: 960
• Page End: 966
• Publication Date: 2020-05-15
• Subjects: low noise amplifiers -- phased array radar -- power amplifiers -- III‐V semiconductors -- Ge‐Si alloys -- BiCMOS integrated circuits -- attenuators -- phase shifters; process‐voltage‐temperature variations -- low noise amplifier -- power amplifier -- control circuits -- phase controls -- temperature compensation techniques -- PVT variations -- SiGe BiCMOS technology -- prototype front‐end -- receiver gain -- transmitter gain -- robustness‐oriented P‐band phased array radar front‐end -- radar applications -- 6‐bit attenuator -- noise figure 3.0 dB -- power 60.0 mW -- voltage 3.3 V -- temperature 100.0 degC -- power 600.0 mW -- gain 12.0 dB -- gain 29.0 dB -- word length 6 bit -- SiGe; Microwaves -- Periodicals; Microwave antennas -- Periodicals; Antennas (Electronics) -- Periodicals; Radio wave propagation -- Periodicals; Microwave communication systems -- Periodicals; 621.381305
• DOI: 10.1049/iet-map.2019.0792
• Languages: English
• ISSNs: 1751-8725

Abstract

Abstract : In this study, the authors present a P‐band phased array front‐end for radar applications, implemented using a 0.18 μ m SiGe BiCMOS process, thereby enhancing robustness over process‐voltage‐temperature (PVT) variations. It comprises a low noise amplifier, 6‐bit attenuator, 6‐bit phase shifter, power amplifier, T‐R switches as well as control circuits. As the key here is to achieve high resolutions in both gain and phase controls, the 6‐bit attenuator and 6‐bit phase shifter are optimised by cascading unit cells with different topologies, hence ensuring a good balance between accuracy, silicon area and robustness. Temperature compensation techniques are also used in the low noise amplifier and power amplifier so that the circuit works robustly against PVT variations. Fabricated using TowerJazz 0.18 μ m SiGe BiCMOS technology, the prototype front‐end occupies a chip area of 5 × 2.5 mm 2, including bonding pads and test buffers. It performs with a receiver (RX) gain of 12 dB, a 3 dB noise figure, and a transmitter (TX) gain of 29 dB, while consuming 60 mW (RX mode) and 600 mW (TX mode) from a 3.3 V supply voltage. The chip is also measured in extreme conditions (e.g. temperatures exceeding 100 ° C ) to ensure robust operation and is suitable for low‐cost phased array systems.