Resistive switching behaviour in ZnO and VO2 memristors grown by pulsed laser deposition. Issue 4 (1st February 2014)

• Record Type: Journal Article
• Authors: Macaluso, R.; Mosca, M.; Costanza, V.; D'Angelo, A.; Lullo, G.; Caruso, F.; Calì, C.; Di Franco, F.; Santamaria, M.; Di Quarto, F.
• Is Part Of: Electronics letters. Volume 50:Issue 4(2014)
• Page Start: 262
• Page End: 263
• Publication Date: 2014-02-01
• Subjects: II‐VI semiconductors -- pulsed laser deposition -- switching -- vanadium compounds -- wide band gap semiconductors -- zinc compounds -- memristors; VO2 -- ZnO -- active device size -- laser ablation -- microscale memristors -- pulsed laser deposition -- resistive switching behaviour; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.3175
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The resistive switching behaviour observed in microscale memristors based on laser ablated ZnO and VO2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm 2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm 2 ZnO‐based memristors have the best resistance off/on ratio.