Cite
HARVARD Citation
Zhang, L. et al. (2015). 500 V dual gate deep‐oxide trench SOI‐LIGBT with improved short‐circuit immunity. Electronics letters. 51 (1), pp. 78-80. [Online].
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Zhang, L. et al. (2015). 500 V dual gate deep‐oxide trench SOI‐LIGBT with improved short‐circuit immunity. Electronics letters. 51 (1), pp. 78-80. [Online].