Current mirror‐based compensation circuit for multi‐row read in‐memory computing. Issue 22 (1st October 2019)

• Record Type: Journal Article
• Authors: Lin, Zhiting; Fang, Yaqi; Peng, Chunyu; Lu, Wenjuan; Li, Xuan; Wu, Xiulong; Chen, Junning
• Is Part Of: Electronics letters. Volume 55:Issue 22(2019)
• Page Start: 1176
• Page End: 1178
• Publication Date: 2019-10-01
• Subjects: compensation -- current mirrors -- signal generators -- SRAM chips; current mirror‐based compensation circuit -- discharge compensation method -- multirow read operations -- static RAM -- current mirrors -- discharge voltage -- wordline signal generation circuit -- integral nonlinearity -- multi‐row read in‐memory computing; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2019.2415
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Multi‐row read plays an important role in in‐memory computing and its precision affects the accuracy of the calculation. In this brief Letter, a discharge compensation method is proposed for the linearisation of multi‐row read operations in static RAM. Current mirrors are added to bitlines to compensate for the discharge voltage. With compensation, the integral non‐linearity decreases by 72% compared with the situation without compensation. In addition, a wordline signal generation circuit based on replica bitline is proposed to reduce area cost.