Identification of local gate leakage with electroluminescence using AlGaN/GaN HEMTs. Issue 16 (1st July 2014)

• Record Type: Journal Article
• Authors: Narita, T.; Fujimoto, Y.; Wakejima, A.; Egawa, T.
• Is Part Of: Electronics letters. Volume 50:Issue 16(2014)
• Page Start: 1162
• Page End: 1164
• Publication Date: 2014-07-01
• Subjects: high electron mobility transistors -- electroluminescence -- leakage currents -- wide band gap semiconductors -- III‐V semiconductors -- aluminium compounds -- gallium compounds; local gate leakage -- gate leakage path -- high electron mobility transistors -- HEMT -- transparent gate electrode -- surface‐side electroluminescence -- spot shape EL -- leakage current -- AlGaN‐GaN; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.1131
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : An application for a transparent gate electrode with surface‐side electroluminescence (EL) observation is proposed for identification of the gate leakage path in AlGaN/GaN high electron mobility transistors. This technique enables surface‐side EL observation throughout the gate electrode, so that the substrate material is unrestricted. Through the transparent gate, a non‐uniformly located spot‐shape EL was clearly observed. By comparing devices with different leakage currents using EL intensity, the location marked by the spot‐shape EL is found and demonstrates a dominant leakage path.