Characterisation of THz emission from double‐metal‐patterned gallium–arsenide multiple emitters. Issue 25 (1st December 2014)

• Record Type: Journal Article
• Authors: Gow, P.C.; McBryde, D.; Berry, S.A.; Barnes, M.E.; Apostolopoulos, V.
• Is Part Of: Electronics letters. Volume 50:Issue 25(2014)
• Page Start: 1966
• Page End: 1968
• Publication Date: 2014-12-01
• Subjects: terahertz wave spectra -- gallium arsenide -- III‐V semiconductors -- Dember effect -- gold -- aluminium -- lead -- copper -- chromium; THz emission -- double‐metal‐patterned gallium–arsenide multiple emitters -- periodic double‐metal structures -- THz output -- lateral photo‐Dember effect -- Schottky barrier heights -- temperature 150 K -- GaAs -- Au‐Al -- Au‐Pb -- Cu‐Cr; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.2751
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Multiplexed gallium–arsenide (GaAs)‐based terahertz (THz) emitters fabricated with periodic double‐metal structures are demonstrated and the effect of different metals on the THz output is investigated. THz emission originates from the lateral photo‐Dember effect and from the different Schottky barrier heights of the chosen metal pair. The metal combinations used were Au–Al, Au–Pb and Cu–Cr. The emitters were characterised according to temperature and the highest peak‐to‐peak THz emission was achieved with the Cu–Cr metal pairing at 150 K.