Distributed feedback 3.27 µm diode lasers with continuous‐wave output power above 15 mW at room temperature. Issue 19 (1st September 2014)

• Record Type: Journal Article
• Authors: Liang, R.; Hosoda, T.; Shterengas, L.; Stein, A.; Lu, M.; Kipshidze, G.; Belenky, G.
• Is Part Of: Electronics letters. Volume 50:Issue 19(2014)
• Page Start: 1378
• Page End: 1380
• Publication Date: 2014-09-01
• Subjects: distributed feedback lasers -- gallium compounds -- III‐V semiconductors -- quantum well lasers -- organic compounds -- diffraction gratings -- electron beam lithography -- ridge waveguides -- laser tuning; GaSb -- temperature 17 degC to ‐20 degC -- power 15 mW to 40 mW -- size 2 mm -- temperature 293 K to 298 K -- wavelength 3.27 mum -- Bragg wavelength temperature tuning rate -- shallow ridge waveguide -- e‐beam lithography -- first‐order index grating -- methane absorption band -- type‐I quantum well laterally coupled distributed feedback diode lasers -- continuous wave output power; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.2733
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : GaSb‐based type‐I quantum well laterally coupled distributed feedback diode lasers emitting in the methane absorption band near 3.27 µm were designed and fabricated. The first‐order index grating with a period of 480 nm was defined by e‐beam lithography and etched on both sides of 6 µm‐wide shallow ridge waveguide. Coated 2 mm‐long devices demonstrated stable continuous‐wave single‐frequency operation in a wide temperature range with an output power of 15 mW at +17°C and 40 mW at −20°C. The Bragg wavelength temperature tuning rate was ∼0.27 nm/K.